Silicon Nanowires

8 nm Si nanowire


Single electron tunnelling


66 mV/dec subthreshold slope


We have developed a top-down fabrication process for junctionless silicon nanowires with diameters down to 8 nm. These devices demonstrate excellent subthreshold characteristics with a slope of 66 mV/dec at 300 K. At low temperatures the nanowires demonstrate a range of quantum and low dimensional properties including quasi-1D electron transport, Luttinger liquid behaviour and single electron tunnelling / Coulomb blockade. We have also used the nanowires as sensors to determine the charge state of POM molecules with the first demonstration of a molecular flash memory with the memory node of less than 2 nm and retention times over 3 months.

  1. "Design and fabrication of memory devices based on nanoscale polyoxometalate clusters" Nature 515, Issue 7528, pp. 545 - 549 (2014) - DOI: 10.1038/nature13951
    C. Busche, L. Vila-Nadal, J. Yan, H.N. Miras, De-L. Long, V.P. Georgiev, A. Asenov, R.H. Pedersen, N. Gadegaard, M.M. Mirza, D.J. Paul, J.M. Poblet and L. Cronin

  2. "One dimensional transport in silicon nanowire junction-less field effect transistors" Scientific Reports 7(1), 3004 (2017) - DOI: 10.1038/s41598-017-03138-5
    M.M. Mirza, F.J. Schupp, J.A. Mol, D.A. MacLaren, G.A.D. Briggs and D.J. Paul

  3. "Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors" Physical Review B 98(23), 235238 (2018) - DOI: 10.1103/PhysRevB.98.235428
    F.J. Schupp, M.M. Mirza, D.A. MacLaren, G.A.D. Briggs, D.J. Paul, and J.A. Mol

  4. "Impact of Randomly Distributed Dopants on Ω-Gate Junctionless Silicon Nanowire Transistors" IEEE Transactions on Electron Devices 65(5) (2018) - DOI: 10.1109/TED.2018.2817919
    H. Carrillo-Nunez, M.M. Mirza, D.J. Paul, D.A. MacLaren, A. Asenov, V.P. Georgiev,

  5. "Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels" IEEE Transactions on Nanotechnology 16, pp. 727 - 735 (2017)- DOI: 10.1109/TNANO.2017.2665691
    V.P. Georgiev, M.M. Mirza, A.-I. Dochioiu, F.-A. Lema, S.M. Amoroso, E. Towie, C. Riddet, D.A. MacLaren, A. Asenov and D.J. Paul