Prof Douglas J. Paul > Silicon Germanium (SiGe) Heterostructure Growth

CenturaThe main tool used by industry for growth of Si/SiGe heterostructures is the chemical vapour deposition (CVD) system. A typical commerical CVD system (the Applied Centura) is shown on the right which can grow wafers up to 300 mm diameter. Most systems now operate at low pressures (10 to 500 Pa) termed LPCVD while some older systems termed UHVCVD operated at 0.1 to 1 Pa. Source gases include SiH4, Si2H6, SiH2Cl2, GeH4 along with PH3, AsH3 and B2H6 for doping.