Prof Douglas J. Paul > Si/SiGe Electronic Properties
By the application of tensile strain, the electron mobility as measured in a n-MOSFET increases as shown in the figure on the right. The full squares are strained-Si SOI devices, open circles are strained-Si on relaxed SiGe. Full circles are IBM results on relaxed SiGe.
The application of tensile strain also increases the hole mobility as measured in a p-MOSFET as shown in the figure on the left. The full squares are strained-Si SOI devices, open circles are strained-Si on relaxed SiGe. Full circles are IBM results on relaxed SiGe.