Dr. Xingsheng Wang

Welcome to the webpage of Dr. Xingsheng Wang (Chinese name 王兴晟).

Xingsheng Wang received the academic training from several disciplines. He obtained the Ph.D. degree in electronics and electrical engineering from University of Glasgow in July of 2010. His Ph.D. study presented a comprehensive bulk MOSFET scaling projection of device design and statistical variability subject to realistic structures starting from 45nm CMOS technology. He was under the supervisions of Prof. Asen Asenov and Dr. Scott Roy. He acquired MPhil degree in mathematics from Tsinghua University with top prize in January 2007. His master research in mathematics covered analysis on fractals under the directions of Prof. Jiaxin Hu. He had B.S. degree in electronic science and technology from Beijing Technology and Business University with top prize in 2004, focusing on signal processing and telecommunication systems.

He is currently the post-doctoral research assistant with Device Modelling Group in the School of Engineering at University of Glasgow. The present research interest involves nanoscale MOSFET devices, TCAD and atomistic modeling and numerical simulations, and intrinsic parameter fluctuations due to statistical variability and reliability. The modelling and simulation tools include TCAD suite Sentaurus and the Glasgow 'atomistic' simulator for process and device simulations, and BSIM4 and PSP for compact modelling.

Presently he is active in the EU ENIAC joint Undertaking project MODERN "MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems," and he was in EPRSRC project "Meeting the design challenges of nano-CMOS Electronics."

PhD Thesis: "Simulation study of scaling design, performance characterization, statistical variability and reliability of decananometer MOSFETs," University of Glasgow 2010.

Selected Publications

• X. Wang, A.R. Brown, B. Cheng and A. Asenov, "Statistical Variability and Reliability in Nanoscale FinFETs," in IEDM Tech. Dig., pp.103-106, Washington D.C., December 5-7, 2011.
• X. Wang, A.R. Brown, N. Idris, S. Markov, G. Roy and A. Asenov, "Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study," IEEE Transactions on Electron Devices, Vol. 58, No. 8, pp. 2293–2301, Aug. 2011. (Cover Story)
• X. Wang, S. Roy, A.R. Brown and A. Asenov, "Impact of STI on Statistical Variability and Reliability of Decananometer MOSFETs," IEEE Electron Device Letters, Vol. 32, No. 4, pp. 479–481, Apr. 2011.

Research fields & Publication list.

English CV, Chinese CV

PhD graduation link (Morning 1st July), Master graduation link

Chinese input

Erdös number = 4

Contact