Stanislav Markov, 9 Feb 2011 (R-514, 1 - 2 PM)
Art De-co
Statistical variability beyond threshold voltage fluctuations -- things related to the correlation and de-correlation of threshold voltage with other important parameters in bulk and fd-soi mosfets

Antonio Martinez, 16 Feb 2011 (R-514, 1 - 2 PM)
Let's torture the kids
An excursion into the quantum 'realm', from which you return with a headache and confusion, but attendance is compulsory.
Topic changed due to popular demand:
An informal discussion on the meaning, applications and limitations of the mass action law, of particular interest to people who work on the development of code with low DoS materials and use FD-statistics; please, bring your books and formula sheets (and appropriate neck-support for the sleeping beauties); moreover, if you have some spare time tonight, you will find it rewarding to look into the fermi integrals and effective DoS formulas, just so you're not completely out of touch tomorrow.

Scott Roy, 23 Feb 2011 (R-514, 1 - 2 PM)
To catch a butterfly and make it fly again!
The 6T-SRAM cell is the protagonist in this story. What we'll revise is why it is so important - how many cells in a big chip, how many transistors, how many sigmas, what proportion of area, power, of an SoC, etc. What we'll learn is how the different electrical parameters of the MOSFET make up the wings of the butterfly, and moreover, how variability (Oh, music for my ears!) tries to damage these wings.

Asen Asenov, 2 Mar 2011 (R-514, 1 - 2 PM)
Every dopant on its place!
The technologists are outsmarting the theoreticians, pushing the boundaries to controlled single dopant placement. What are the viable techniques, what they promise, and how the device-modelling community can get involved.

Stanislav Markov, 9 Mar 2011 (R-514, 1 - 2 PM)
The elastic gate
While the common obsession is with reducing transistor gate lenght, we're trying to stretch it too, and see how the mosfet responds to the crowds of metal grains and dopants being denser/looser: a practice talk for ulis.

Gareth Roy, 16 Mar 2011 (R-514, 1 - 2 PM)
Alice in wonderland part I - pushing the button (and stretching for it)
This is it -- a unique opportunity to access the wonderful world of a MOSFET, including its atomic-scale features, on the push of a button. Relax, take it easy, and go with the flow, which is drift-diffusive! No equations here. It is a guided tour through a gallery of manga, neatly associated with clear flowcharts and block diagrams. Occasionally, for the number-obsessed, there are some statistics -- how much visitors come to the museum, how long they spent going round on their blades, how much of their brain is consumed, etc.

Gareth Roy, 23 Mar 2011 (R-514, 1 - 2 PM)
Alice in wonderland part II - the return ticket is lost...
Can't get out of the flow now. So, you better learn how to swim along, and write The Input File. This is a review of the syntax, (which is convincingly easy to use and flexible) reminder of best practices, and the rules of consistency (organising your simulation environment, and maintaining its tidiness and integrity); visual trees are essential. Finally, a word about the bright horizons -- databases anyone?

Craig Riddet, 30 Mar 2011 (R-514, 1 - 2 PM)
The years of Renaissance(Ge) are ahead!
But are we going to catch them, ever? The now-ancient art of Si chipmaking is doomed to the dark ages due to ruthless SCE and variability, and some craftsmen believe Ge is the medium for the Renaissance art. But enough said! Enough polar bears killed! We want the evidence! Is there something more than high mobility made for real? And what the speculative modelling promises for the future, and how is modelling done (parallel and contrasts to Si are essential)?

Binjie Cheng, 6 Apr 2011 (R-514, 1 - 2 PM)
Black magic on a statistical scale
Statistical compact modelling is a black magic with many ingredients. So, how do we choose the right ones, and in what proportions we mix them? And do we know what the compot really tastes in the end? In other words, can we catch the departure from normality, hinted by physical simulations, and more importantly -- how do we inflate the bowls from W/L=1, to wider portions, with W/L=5 for example (in case your guests are logic-oriented).

Andrew R. Brown, 13 Apr 2011 (R-514, 1 - 2 PM)
When Harry met Sally...
What happens at heterojunctions has been of prime interest to the intelligence offices around the globe. Yet, only one secret development has come (or arriving) to fruition, in the shape of a 3D-'atomistic' simulator. What did the magician do? Who, and what we can combat with the new tool. And of course, we want all the info encrypted -- equations, boundary conditions, what part of the physical reality we model, and what is left as classified!