Welcome

Stanislav Markov is a post-doctoral research assistant in the School of Engineering at the University of Glasgow. Working in the Device Modelling Group lead by Prof. Asen Asenov, Stanislav is pursuing his interests in modelling and simulation of nano-scale electron devices.

Presently, Stanislav investigates statistical variability in the threshold voltage and drive current of ultra-scaled devices with high-k dielectric stacks (e.g. in MOSFETs with channel length below 20nm), while his previous focus was on the direct tunnelling gate leakage and its variability. The aim is to gain further understanding of the phenomena that lead to a large spread of device characteristics, and to quantify the impact that random sources of fluctuations (e.g. doping atoms and gate dielectric non-uniformity) have on the performance and power dissipation of nano-scale transistors. This helps to objectively assess the challenges that discreteness of charge and matter on the atomic scale imposes on silicon device scaling, and to make informed decisions throughout circuits and systems design, with variability in mind.

Before joining the Device Modelling Group in 2005, Stanislav held a Senior Design Engineer post with Cadence (Livingston, UK, 2000-2004). He has acquired more than 7 years of industrial experience, becoming an expert in digital VLSI systems design and verification. He received an M.Sc. degree in electronics engineering from the Technical University of Sofia, Bulgaria in 1997.

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A kind of excellence

Stanislav received the Alan Stirling Brown prize for outstanding post-graduate research, upon his graduation (2 July 2009) with a PhD degree from the Faculty of Engineering, University of Glasgow, UK.

Stanislav is the winner of the prestigious 38-th IEEE SISC Ed Nicollian Award for best student paper:
S. Markov, S. Roy, C. Fiegna, E. Sangiorgi, and A. Asenov - "Band-gap and permittivity change at high-k gate stack interfaces - device perspective" - 38-th IEEE Semiconductor Interface Specialists Conference, December 6-8, 2007, Arlington (VA), USA

Scholarships

Stanislav's PhD research was mostly funded through an Engineering and Physical Sciences Research Council (EPSRC) Fellowship, and was supervised by Prof. Asen Asenov.

In 2007, Stanislav accepted a Marie Curie Fellowship for Early Stage Research Training from the European Commission, for a six-month work in the The Advanced Research Center on Electronic Systems for Information and Communication Technologies E. De Castro (ARCES), at the University of Bologna, Italy. In the scope of this fellowship, Stanislav worked on tunnelling current through alternative dielectric gate stacks, under the supervision of Prof. Claudio Fiegna, in the group lead by Prof. Enrico Sangiorgi.

Select Publications

S. Markov, X. Wang, N. Moezi and A. Asenov, "Drain Current Collapse in Nano-Scaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain Extensions," Electron Devices, IEEE Transactions on, accepted, 2011.

S. Markov, S. Roy and A. Asenov, "Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors," Electron Devices, IEEE Transactions on, Vol. 57, No. 11, pp. 3106 - 3114, Nov. 2010.

S. Markov, P. V. Sushko, C. Fiegna, E. Sangiorgi, A. Shluger and A. Asenov, "From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices," Journal of Physics: Conference Series, Vol. 242, No. 1, p. 012010, Jan. 2010.

S. Markov, P. V. Sushko, S. Roy, C. Fiegna, E. Sangiorgi, A. L. Shluger, and A. Asenov, "Si-SiO2 interface band-gap transition - effects on MOS inversion layer," Physica Status Solidi (A) 205, 1290 (2008)

PhD Thesis

S. Markov, "Gate leakage variability in nano-CMOS transistors", University of Glasgow (2009)