Papers by John H. Davies

I am trying to compile a list of my recent talks and published papers here but I’m afraid that there is still a long way to go!

Talks

Michel Pioro-Ladrière, Andy S Sachrajda, John H Davies, Andrew R Long, P Zawadzki, J Lapointe, J Gupta, Z Wasilewski and S Studenikin, The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices, Duisburg, 2005 September
A. Asenov, J. H. Davies and G. Slavcheva, Mass-produced mesoscopic MOSFETs; or Fluctuations in nanoscale transistors – Every Atom Counts!, Duke, 2004 July
J. H. Davies, Elastic fields in optoelectronic devices, Lausanne, 2003 January

Papers

M. Pioro-Ladrière, John H. Davies, A. R. Long, A. S. Sachrajda, Louis Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. Wasilewski, S. Studenikin, The origin of switching noise in GaAs/AlGaAs lateral gated devices, Physical Review B, 72, 115331, pages 1–8 (2005).
J H Davies, Peter Offermans and Paul M Koenraad, Relaxation of a strained quantum well at a cleaved surface. II. Effect of cubic symmetry, Journal of Applied Physics, 98, 053504, pages 1–10 (2005).
S Chowdhury, A R Long, E Skuras, J H Davies, K Lister, G Pennelli and C R Stanley, Inverse flux quantum periodicity in the amplitudes of commensurability oscillations in two-dimensional lateral surface superlattices, Physical Review B, 69, 035330 (2004).
J H Davies, Elastic field in a semi-infinite solid due to thermal expansion or a coherently misfitting inclusion, ASME Journal of Applied Mechanics, 70, 655–660 (2003).
A. Asenov, A. R. Brown, J. H. Davies, S. Kaya and G. Slavcheva, Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (Invited paper), IEEE Transactions on Electron Devices, 50, 1837–1852 (2003).
A. Asenov, R. Balasubramaniam, A. R. Brown and J. H. Davies, RTS amplitudes in decananometer MOSFETs: A 3D simulation study, IEEE Transactions on Electron Devices, 50, 839–845 (2003).
J H Davies, D M Bruls, J W A M Vugs and P M Koenraad, Relaxation of a strained quantum well at a cleaved surface, Journal of Applied Physics, 91, 4171–4176 (2002).
[Also in Virtual Journal of Nanoscale Science & Technology, 8 April 2002, Volume 5, Issue 14.]
G Slavcheva, J H Davies, A R Brown and A Asenov, Potential fluctuations in MOSFETs generated by randomly distributed impurities in the depletion layer, Journal of Applied Physics, 91, 4326–4334 (2002).
A. Asenov, S. Kaya and J. H. Davies, Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations, IEEE Transactions on Electron Devices, 49, 112–119 (2002).
S. Garcia Blanco, A. Glidle, J. H. Davies, J. S. Aitchison and J. M. Cooper, Electron-beam-induced densification of Ge-doped flame hydrolysis silica for waveguide fabrication, Applied Physics Letters, 79, 2889–2891 (2001).
A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies and S. Saini, Increase in the random dopant induced threshold fluctuations and lowering in sub-100nm MOSFETs due to quantum effects: A 3D density gradient simulation study, IEEE Transactions on Electron Devices, 48, 722–729 (2001).
S. Chowdhury, E. Skuras, C. J. Emeleus, A. R. Long, J. H. Davies, G. Pennelli and C. R. Stanley, Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlattices, Physical Review B, 63, 153306 (2001).
E. Skuras, A. R. Long, S. Chowdhury, M. Rahman, K. J. Kirk and J. H. Davies, Two-dimensional arrays of magnetic nanostructures characterized using an underlying two-dimensional electron gas, Journal of Applied Physics, 90, 2623–2625 (2001).
S. Chowdhury, C. J. Emeleus, B. Milton, E. Skuras, A. R. Long, J. H. Davies, G. Pennelli and C. R. Stanley, Importance of symmetry breaking in two-dimensional lateral surface superlattices, Physical Review B, 62, R4821–R4824 (2000).
D. E. Grant, A. R. Long and J. H. Davies, Commensurability oscillations due to pinned and drifting orbits in a two-dimensional lateral surface superlattice, Physical Review B, 61, 13127–13130 (2000).
K. F. Rasmussen, J. H. Davies, T. J. E. Miller, M. I. McGilp and M. Olaru, Analytical and numerical computation of airgap magnetic fields in brushless motors with surface permanent magnets (Prize Paper Award), IEEE Transactions on Industry Applications, 36, 1547–1554 (2000).
A. Asenov, A. R. Brown, J. H. Davies and S. Saini, Hierarchical approach to atomistic 3D MOSFET simulation, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18, 1558–1565 (1999).
J. H. Davies, Quantum dots induced by strain from buried and surface stressors, Applied Physics Letters, 75, 4142–4144 (1999).
A. R. Long, E. Skuras, S. Vallis, K. Ali, R. Cusco, I. A. Larkin, J. H. Davies and M. C. Holland, Potential modulation by strain in lateral surface superlattices, Physical Review B, 60, 1964–1974 (1999).
C. R. Arokianathan, A. Asenov and J. H. Davies, Mesh-based particle simulation of sub-0.1 micron FETs, Semiconductor Science and Technology, 13, A173–A176 (1998).
S. Cunningham, I. A. Larkin and J. H. Davies, Noncontact scanning probe microscope potentiometry of surface charge patches: origin and interpretation of time-dependent signals, Applied Physics Letters, 73, 123–125 (1998).
J. H. Davies, Elastic and piezoelectric fields around a buried quantum dot: A simple picture, Journal of Applied Physics, 84, 1358–1365 (1998).
J. H. Davies, D. E. Petticrew and A. R. Long, Theory of potential modulation in lateral surface superlattices. III. Two-dimensional superlattices on arbitrary surfaces, Physical Review B, 58, 10789–10799 (1998).
C. J. Emeleus, B. Milton, A. R. Long, J. H. Davies, D. E. Petticrew and M. C. Holland, Large periodic potential under lateral surface superlattices fabricated from heteroepitaxial stressor layers, Applied Physics Letters, 73, 1412–1414 (1998).
I. A. Larkin, J. H. Davies, A. R. Long and R. Cusco, Theory of potential modulation in lateral surface superlattices. II. Piezoelectric interaction, Physical Review B, 56, 15242–15251 (1997).
E. Skuras, A. R. Long, I. A. Larkin, J. H. Davies and M. C. Holland, Anisotropic piezoelectric effect in lateral surface superlattices, Applied Physics Letters, 70, 871–873 (1997).
C. R. Arokianathan, A. Asenov and J. H. Davies, An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices, Journal of Applied Physics, 80, 226–232 (1996)
D. R. S. Cumming and J. H. Davies, Electron–electron scattering in a high purity mesoscopic conductor, Applied Physics Letters, 69, 3363–3365 (1996)
M. Rahman, J. H. Davies, I. A. Larkin, M. C. Holland, A. R. Long and J. G. Williamson, Edge and bulk transport in variably-connected quantum Hall conductor, Physical Review B, 54, 16409–16412 (1996)
Z. Borsosfoldi, M. Rahman, I. A. Larkin, A. R. Long, J. H. Davies, J. M. R. Weaver, M. C. Holland and J. G. Williamson, Single-electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures, Applied Physics Letters, 66, 3666–3668 (1995)
J. H. Davies, I. A. Larkin and E. V. Sukhorukov, Modeling the patterned two-dimensional electron gas. Electrostatics, Journal of Applied Physics, 77, 4504–4512 (1995)
J. H. Davies, J. C. Egues and J. W. Wilkins, Effect of incoherence on current and shot noise in resonant tunneling: An exactly solvable model, Physical Review B, 52, 11259–11265 (1995)
M. Giltrow, A. Kozorezov, M. Sahraoui-Tahar, J. K. Wigmore, J. H. Davies, M. C. Holland, C. R. Stanley and C. D. W. Wilkinson, Observation of plasmon–optic phonon coupled modes in GaAs/AlGaAs resonant tunneling structures via acoustic phonon decay products, Physical Review Letters, 75, 1827–1830 (1995)
I. A. Larkin and J. H. Davies, Edge of the two-dimensional electron gas in a gated heterostructure, Physical Review B, 52, R5535–5538 (1995)
E. Skuras, M. C. Holland, C. J. Barton, J. H. Davies and A. R. Long, Electron transport in shallow heterostructures with AlGaAs and AlAs barriers, Semiconductor Science and Technology, 10, 922–929 (1995)
I. G. Thayne, G. U. Jensen, M. C. Holland, Y. Chen, W. Li, A. Paulsen, J. H. Davies, S. P. Beaumont and P. K. Bhattacharya, Comparison of 80nm–200nm gate length Al0.25Ga0.75As/GaAs/(GaAs:AlAs), Al0.3Ga0.7As/In0.15Ga0.85As/GaAs and In0.52Al0.48As/In0.65Ga0.35As/InP HEMTs, IEEE Transactions on Electron Devices, 42, 2047–2055 (1995)
R. Cusco, M. R. Holland, J. H. Davies, I. A. Larkin, E. Skuras, A. R. Long and S. P. Beaumont, Anharmonic periodic modulation in lateral surface superlattice devices, Surf. Sci, 305, 643–647 (1994)
J. H. Davies and I. A. Larkin, Theory of potential modulation in lateral surface superlattices, Physical Review B, 49, 4800–4809 (1994)
P. Hyldgaard, S. Hershfield, J. H. Davies and J. W. Wilkins, Resonant tunneling with an electron–phonon interaction, Annals of Physics (NY), 236, 1–42 (1994)
J. H. Davies, S. Hershfield, P. Hyldgaard and J. W. Wilkins, Current and rate equation for resonant tunneling, Physical Review B, 47, 4603–4618 (1993)
S. Hershfield, J. H. Davies, P. Hyldgaard, C. J. Stanton and J. W. Wilkins, Zero frequency noise for the double tunnel junction Coulomb blockade, Physical Review B, 47, 1967–1979 (1993)
A. R. Long, J. H. Davies, M. Kinsler, S. Vallis and M. C. Holland, A simple model for the characteristics of GaAs/AlGaAs modulation doped devices, Semiconductor Science and Technology, 8, 1581–1589 (1993)
J. K. Wigmore, M. Erol, M. Sahraoui-Tahar, M. Ari, C. D. W. Wilkinson, J. H. Davies, M. C. Holland and C. R. Stanley, Measurement of energy loss from a HEMT structure by observing phonons, Semiconductor Science and Technology, 8, 322–326 (1993)
J. H. Davies, P. Hyldgaard, S. Hershfield and J. W. Wilkins, Classical theory of shot noise in resonant tunneling, Physical Review B, 46, 9620–9633 (1992)
S. Hershfield, J. H. Davies and J. W. Wilkins, Resonant tunneling through an Anderson impurity: I. Current in the symmetric model, Physical Review B, 46, 7046–7060 (1992)
Y. S. Tang, G. Jin, J. H. Davies, J. G. Williamson and C. D. W. Wilkinson, Quantized conductance in a long silicon inversion wire, Physical Review B, 45, 13799–13802 (1992)
J. W. Wilkins, S. Hershfield, J. H. Davies, P. Hyldgaard and C. J. Stanton, Noise as a diagnostic of tunneling mechanisms, Physica Scripta, T42, 115–121 (1992)
S. Hershfield, J. H. Davies and J. W. Wilkins, Probing the Kondo resonance by resonant tunneling through an Anderson impurity, Physical Review Letters, 67, 3720–3723 (1991)
M. J. Laughton, J. R. Barker, J. A. Nixon and J. H. Davies, Modal analysis of transport through quantum point contacts using realistic potentials, Physical Review B, 44, 1150–1153 (1991)
J. A. Nixon, J. H. Davies and H. U. Baranger, Breakdown of quantized conductance in point contacts calculated using realistic potentials, Physical Review B, 43, 12638–12641 (1991)
J. K. Wigmore, M. Erol, M. Sahraoui-Tahar, C. D. W. Wilkinson, J. H. Davies and C. R. Stanley, Emission and absorption of phonons by the two-dimensional electron gas in a GaAs MODFET structure, Semiconductor Science and Technology, 6, 837–840 (1991)
J. A. Nixon and J. H. Davies, Potential fluctuations in heterostructure devices, Physical Review B, 41, 7929–7933 (1990)
M. Rahman and J. H. Davies, Intrinsic hysteresis in resonant tunnelling diodes, Semiconductor Science and Technology, 5, 168–176 (1990)
J. H. Davies and J. A. Nixon, Fluctuations from random charges under a short gate in a narrow-channel MODFET, Physical Review B, 39, 3423–3426 (1989)
J. H. Davies and J. W. Wilkins, Narrow electronic bands in high electric fields: static properties, Physical Review B, 38, 1667–1680 (1988)
J. H. Davies, Electronic properties of narrow semiconducting wires near threshold, Semiconductor Science and Technology, 3, 995–1009 (1988)
F. S. Khan, J. H. Davies and J. W. Wilkins, Quantum transport equations for high electric fields, Physical Review B, 36, 2578–2597 (1987)
J. H. Davies and J. R. Franz, Coulomb gap in sodium tungsten bronzes, Physical Review Letters, 57, 475–478 (1986)
S. K. Sarker, J. H. Davies, F. S. Khan and J. W. Wilkins, Quantum corrections to the Boltzmann equation for transport in semiconductors in high electric fields, Physical Review B, 33, 7263–7266 (1986)
J. H. Davies, The random dipole model of weakly compensated classical impurity bands, Journal of Physics C, 18, 3663–3672 (1985)
J. H. Davies, The density of states in the Coulomb gap, Philosophical Magazine B, 52, 511–520 (1985)
J. H. Davies, P. A. Lee and T. M. Rice, Properties of the electron glass, Physical Review B, 29, 4260–4271 (1984)
J. H. Davies, Coulomb gaps and Hubbard gaps, Journal of Physics C, 17, 3031–3043 (1984)
J. H. Davies, P. A. Lee and T. M. Rice, Electron glass, Physical Review Letters, 49, 758–761 (1982)
J. H. Davies, The mobility edge in amorphous silicon, Philosophical Magazine B, 41, 373–382 (1980)
N. F. Mott and J. H. Davies, Metal–insulator transition in doped semiconductors, Philosophical Magazine B, 42, 845–858 (1980)
J. H. Davies and V. Heine, Partial resonances in the electronic theory of transition metals, Journal of Physics C, 11, 4957–4961 (1978)

Books

J. H. Davies, The physics of low-dimensional semiconductors, Cambridge: Cambridge University Press (1998).
This is available in hardback, paperback and Japanese editions; a Chinese edition is expected in 2006.
A. R. Long and J. H Davies, Proceedings of the 26th Conference on the Physics of Semiconductors, Bristol: Institute of Physics (2003).
J. H Davies and A. R. Long, Proceedings of the 38th Scottish Universities Summer School in Physics on the Physics of nanostructures, Bristol: Institute of Physics (1992).

Return to my home page