Riddet!

// Learned //

Received a first class honours BEng degree in Electronics with Music from the University of Glasgow in 2003. Now employed in the same university as a Research Assistant while completing research for a PhD degree as part of the Device Modelling Group in the Department of Electronics and Electrical Engineering.

// Does.... //

Current research is focued on hole transport in Germanium using full band (6-band k•p) Monte Carlo considering the impact of orienation and strain, as well as relevant scattering mechanisms and device simulation.

Previous research was briefly on Brownian simulation of Ion Channels (more details via the Device Modelling Group website). Most specifically, the inclusion of finite sized particles, and the development of appropriate collision detection.

PhD research was on the development of a 3D Self Consistent Monte Carlo Simulator with Quanutm Corrections using the Density Gradient formalism. Principle research on the effect of body thickness fluctuations on transport in UTB SOI MOSFETs. Further details here.

// Scribbles //

C. Riddet, J. R. Watling, K. Chan, and A. Asenov, “Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium,” Journal of Physics: Conference Series, vol. 242, p. 012017, 2010.

C. Riddet, J. R. Watling, M. K. H. Chan, and A. Asenov, “Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium,” in II Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures, p. 17, 2010.

P. Palestri, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Beranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majikusiak, S. Monfray, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, E. Sangiorgi, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti and J. Walczak, "A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs," Solid-State Electronics, vol. 53, no. 12, pp. 1293–1302, (2009)

A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane and S. Roy, "Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques,", Journal of Computational Electronics, , vol. 8, pp. 349–373, (2009)

A. Asenov, S. Roy, A. R. Brown, G. Roy, C. Alexander, C. Riddet, C. Millar, B. Cheng, A. Martinez, N. Seoane, D. Reid, M. F. Bukhori, X. Wang and U. Kovac, "Advanced simulation of statistical variability and reliability in nano CMOS transistors", IEDM. Tech, Dig., pp. 421 (2008) Invited

C. Riddet and A. Asenov, "Convergence Properties of Density Gradient Quantum Corrections in 3D Ensemble Monte Carlo Simulations", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.261-264 (2008)

C. Riddet, A. R. Brown, S. Roy, and A. Asenov, "Boundary Conditions for Density Gradient Corrections in 3D Monte Carlo Simulations", Journal of Computational Electronics, Vol.7 No.3, pp.231-235 (2008)

C. Riddet, "Monte Carlo Study of Current Variablity in UTB DG SOI MOSFETs", PhD Thesis, 2008

C. Riddet, A. R. Brown, S. Roy, and A. Asenov, "Boundary Conditions for Density Gradient Corrections in 3D Monte Carlo Simulations", Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), University of Massachusetts, Amherst, USA, 8-10 October (2007)

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, "3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs", IEEE Transactions on Nanotechnology, Vol.6, No.1, pp.48-55 (2007)

C. Riddet, A. R. Brown, C. Alexander, S. Roy and A. Asenov, "Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp.200-203 (2006)

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, "Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs", Silicon Nanoelectronics Workshop, 12-13 June, Kyoto, Japan, pp.6-7 (2005)

C. Riddet, A. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, "Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study", Journal of Computational Electronics, Vol.3, pp.341-345 (2004)

C. Riddet, A. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, "Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study", Abstracts of the 10th International Workshop on Computational Electronics (IWCE-10), W. Lafayette, IN, USA, 24-27 October, pp.194-195 (2004)

// Gatherings //

Poster presentation ("Monte Carlo simulation study of the impact of strain and substrate orientation on hole mobility in Germanium") at II Workshop on Theory, Modelling and Computational Methods for Semiconductor Materials and Nanostructures, York, UK, January 2010.

Poster presentation ("Convergence Properties of Density Gradient Quantum Corrections in 3D Ensemble Monte Carlo Simulations") at The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan, September 2008.

Poster presentation ("Boundary Conditions for Density Gradient Corrections in 3D Monte Carlo Simulations") at the 12th International Workshop on Computational Electronics (IWCE-12), University of Massachusetts, Amherst, USA, October 2007.

Poster presentation ("Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations") at The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, Califorina, United States, September 2006.

Oral presentation ("Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs") at Silicon Nanoelectronics Workshop, Kyoto, Japan, June 2005.

Poster presentation ("Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An ab initio Monte Carlo Simulation Study") at the 10th International Workshop on Computational Electronics (IWCE-10), Purdue University, West Layafette, USA, October 2004.

// Find Me //

Craig Riddet
Dept. of Electronics & Electrical Engineering
University of Glasgow
Glasgow
G12 8LT
Scotland

e-mail: c.riddet at elec.gla.ac.uk

// This is not an exit //