Publications

Binjie's Publications

1. B.-J. Cheng, S. Roy, A. Asenov, "Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling", accepted The European Solid-State Device Research Conference, Montreux, Switzerland, Sept. 2006.

2. B.-J. Cheng, S. Roy, G. Roy, A. Brown, A. Asenov, “Low Power, High Density CMOS 6-T SRAM Cell Design Subject to ‘Atomistic’ Fluctuations ”, 7th Ultimate Integration of Silicon (ULIS 2004), Grenoble, March 2006

3. B.-J. Cheng, S. Roy, A. Asenov, “ Impact of Intrinsic Parameter Fluctuations on Decananometer Circuits, and Circuit Modelling Techniques”, MIXDES 2006, 2006.

4. B.-J. Cheng, S. Roy, A. Martinez , A. Asenov, “Impact of Oxide Thickness Fluctuation on MOSFETs Gate Tunnelling”, International Conference on Solid State Devices and Materials, Kobe, Japan, Sept. 2005

5. B.-J. Cheng, S. Roy, G. Roy, F. Adamu-Lema, A. Asenov, “Impact of Intrinsic Parameter Fluctuations in Decanano MOSFETs on yield and functionality of SRAM Cells”, Solid State Electronics, 2005, Vol.49, pp.740-746.

6. K. Samsudin, B.-J. Cheng, A.R. Brown, S. Roy and A. Asenov, “Impact of body thickness fluctuation in nanometre scale UTB SOI MOSFETs on SRAM cell functionality”, The 6th European Conference on Ultimate Integration of Silicon, (Bologna, Italy), pp. 45–48, April, 2005. [Selected for publication in Solid State Electronics]

7. K. Samsudin, B.-J. Cheng, A.R. Brown, S. Roy and A. Asenov, “Impact of UTB SOI SRAM cell stability under the inﬂuence of intrinsic parameter ﬂuctuations”, The European Solid-State Device Research Conference, Grenoble, France, Sept. 2005

8. K. Samsudin, B.-J. Cheng, A.R. Brown, S. Roy and A. Asenov, “Impact of Random Dopant Induced Fluctuations on Sub-15nm UTB 6T SRAM Cells”, IEEE International SOI Conference, Honolulu, Hawaii, USA, Oct. 2005

9. B.-J. Cheng, S. Roy, A. Asenov, “The impact of random doping effects on CMOS SRAM cell,” Proceeding of the 30th European Solid-State Circuits Conference (ESSCIRC), Leuven, Belgium, 2004, pp.219-222.

10. B.-J. Cheng, S. Roy, G. Roy, F. Adamu-Lema, A. Asenov, “Impact of intrinsic fluctuations in Decanano MOSFETs on yield and functionality of SRAM cells,” 5th Ultimate Integration of Silicon (ULIS 2004), IMEC, Leuven, March 2004, pp. 73-75.

11. B.-J. Cheng, S. Roy and A. Asenov, “Compact Model Strategy for Studying the Impact of Intrinsic Parameter Fluctuations on Circuit Performance,” MIXDES 2004 Proceedings, 2004.

12. B.-J. Cheng, S. Roy, G. Roy, A. Asenov, “Integrating ‘atomistic’, intrinsic parameter fluctuations into compact model circuit analysis,” 33rd Conference on European Solid-State Device Research (ESSDERC), Portugal, 2003, pp.437-440

13. S. Roy, B.-J. Cheng, G. Roy, A. Asenov, “A methodology for quantitatively introducing ‘atomistic’ fluctuations into compact device models for circuit analysis,” Journal of Computational Electronics, Dec. 2003, Vol.2, no. 2-4, pp. 427-431

14. L.-P. Wang, T.-T. Tang, B.-J. Cheng, etc., “Differential Algebraic Method for Arbitrary-order Aberration Analysis of Combined Electron Beam Focusing-Deflection Systems,” Optik, 2002, Vol.113, No.4, pp.181-187.

15. L.-P. Wang, T.-T. Tang, B.-J. Cheng, etc., “Application of Differential Algebraic Method to the Aberration Analysis of Curvilinear-Axis Optical Systems,” Optik, 2002, Vol.113, No.4, pp.171-176.

16. B.-J. Cheng, Z.-B. Shao, L.-P. Wang, et al., “Device model parameter extraction based on automatic differentiation technique,” Research & Progress of Solid State Electronics (China), 2002, Vol.22, No.1, pp. 8-13

17. B.-J. Cheng, Z.-B. Shao, T.-T. Tang, et al., “Modeling of Subthreshold Characteristic of Deep-Submicrometer FD Device,” Chinese Journal of Semiconductors, 2001, Vol. 22, No.7, pp.908-914.

18. B.-J. Cheng, Z.-B. Shao, Z. Yu , et al., “Modeling of front and back gate surface potential of deep-submicro FD-SOI MOSFET,” Proceedings. 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, pp. 867-870

19. B.-J. Cheng, Z.-B. Shao, L.-P. Wang, T.-T. Tang, “Automatic Differentiation Technique in Device Model Parameter Extraction,” International Conference on Modeling and Simulation of Microsystems (MSM 2000), San Diego, California, U.S.A, 2000.

20. B.-J. Cheng, Z.-B. Shao, T.-T. Tang, “MOSFET model base on Surface Potential,” Research & Progress of Solid State Electronics (China), 2000, Vol.20, No.1, pp. 66-73

21. L.-P. Wang, B.-J. Cheng, T.-T. Tang, J. Cai, “Automatic Differentiation Technique For Aberration Analysis Of Electronic Optic Systems With Implementation In Visual C++ Environment,” Journal of Chinese Electron Microscopy Society, Vol. 18, No.6, pp. 644-651.

22. L.-P. Wang, T.-T. Tang, B.-J. Cheng, “Differential Algebraic Theory and Method for Arbitrary High Order aberrations of electron optics,” Optik, 2000, Vol. 111, No.7, pp. 285-289.

23. L.-P. Wang, T.-T. Tang, B.-J. Cheng, “Differential Algebraic Method for Arbitrary High Order aberration analysis of electron deflection system,” Optik , 2000, Vol. 111, No.7, pp. 290-296.

24. L.-P. Wang, T.-T. Tang, B.-J. Cheng, J. Cai. Object Oriented Implementation of Differential Algebraic Method up to Arbitrary High Order, Journal of Xi’an Jiaotong University, 2000, Vol.34, No.6, pp.55-59.

1. B.-J. Cheng, L.-P. Wang, Z.-B. Shao, T.-T. Tang, “Automatic Differentiation Technique and Its Application in Data Fitting,” Journal of Xi’an Jiaotong University, 1999, Vol. 33, No.7, pp.19-22.

2. L.-P. Wang, T.-T. Tang, B.-J. Cheng, J. Cai, “Automatic Differentiation Method For The Aberration Analysis Of Electron Optical Systems,” Optik , 1999, Vol. 110, No.9, pp. 408-414.

3. B.-J. Cheng, X.-D. Liu, T.-T. Tang, L.-P. Wang, “Experimental Studies of the Boersch Effect of Electron Beams,” Vacuum Science and Technology (China), 1998, Vol.18, No.5, pp.364-368.

4. B.-J. Cheng, L.-P. Wang, T.-T. Tang, “Optimization of Focusing Lens in the Experimental System of Boersch Effect,” Vacuum Electronics (China), 1998, No.5, pp.7-11.