Asen Asenov received his MSc degree in solid state physics from Sofia University, Bulgaria in 1979 and PhD degree in physics from The Bulgarian Academy of Science in 1989. He had 10 years industrial experience as a head of the Process and Device Modelling Group in IME - Sofia, developing one of the first integrated process and device CMOS simulators IMPEDANCE. In 1989-1991 he was a visiting professor at the Physics Department of TU Munich.
He joined the Department of Electronics and Electrical Engineering at the University of Glasgow in 1991 and served as a Head of Department in 1999-2003. As a professor of Device Modelling, leader of the Device Modelling Group he co-ordinates the development of 2D and 3D quantum mechanical, Monte Carlo and classical device simulators and their application in the design of advanced and novel CMOS devices. He has pioneered the simulations and the study of various sources of intrinsic parameter fluctuations in decanano and nano CMOS devices including random dopants, interface roughness and line edge roughness.
Dr Asenov is a fellow of the Royal Academy of Scotland, a Senior Member of IEEE and a member of the IEEE EDS TCAD Committee. He is currently a member of the programme committees for IEDM, ESSDERC, IWCE, SNW, HCIS and IEEE Nano Conf, a Program Committee Chair for SNW2006 and Symposium B organiser at the E-MRS2006 Spring Meeting. He has over 330 publications in process and device modelling and simulation, semiconductor device physics, 'atomistic' effects in ultra-small devices and impact of variations on circuits and systems including in the last 5 years more than 15 papers in IEEE Transaction journals. In the last 5 years he has given also more than 65 invited talks at prestigious international conferences and meetings in Europe, USA and Japan.
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Department of Electronics and Electrical Engineering