Gallium Nitride micro-LEDs
GaN is an extremely important material system which is driving the move to solid state lighting. The material properties of GaN are not well understood and this work has been looking at the bias dependencies of the carrier lifetime and trying to relate this back to the device physics. This has been done by studying micro LED devices (radius<100um) and their modulation bandwidth. This work, In collaboration with the Institute of Photonics and the University of Edinburgh, has produced the worlds highest bandwidth GaN LED and demonstrated prototype visible light communication systems including those with integrated CMOS drivers.
Presentations: POF 2011