List of Publications

Book Chapters

A. Asenov, A. R. Brown, B. Cheng, J. R. Watling, G. Roy and C. Alexander, Simulation of nano-CMOS devices: from atoms to architecture, in “Nanotechnology for Electronic Materials and Devices” (ISBN: 0387233490), Eds. A. Korkin, J. Labanowski, E. Gusev and S. Luryi, Springer, New York, pp.257-303, 2006

A. Asenov, A. R. Brown and S. Kaya, Atomistic Simulation of Decanano MOSFETs, in “Predictive Simulation of Semiconductor Processing: Status and Challenges” (ISBN: 3540204814), Eds. J. Dabrowski & E. R. Weber, Springer, Berlin, pp.111-156, 2004

Journal Papers

R. N. Simpson, S. P. A. Bordas, A. Asenov and A. R. Brown, Enriched residual free bubbles for semiconductor device simulation, Computational Mechanics, in press.

A. Martinez, N. Seoane, M. Aldegunde, A. R. Brown and A. Asenov, The Role of Discrete Dopants in the Statistical Variability of Narrow Gate-All-Around Silicon Nanowire Transistors, IEEE Transactions on Electron Devices, Vol.58, No.8, pp.2209-2217, August 2011.

X. Wang, A. R. Brown, N. Idris, S. Markov, G. Roy and A. Asenov, Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3D simulation scaling study, IEEE Transactions on Electron Devices, Vol.58, No.8, pp.2293-2301, August 2011.

B. Cheng, A. R. Brown and A. Asenov, Impact of NBTI/PBTI on SRAM Stability Degradation, IEEE Electron Device Letters, Vol. 32, No. 6, pp.740-742, 2011

X. Wang, S. Roy, A. R. Brown and A. Asenov, Impact of STI on Statistical Variability and Reliability of Decananometer MOSFETs, IEEE Electron Device Letters, Vol. 32, No. 4, pp. 479–481, Apr. 2011.

C. Riddet, C. L. Alexander, A. R. Brown, S. Roy and A. Asenov, Simulation of “Ab Initio” Quantum Confinement Scattering in UTB MOSFETs Using Three-Dimensional Ensemble Monte Carlo, IEEE Transactions on Electron Devices, Vol. 58, No. 3, pp. 600–608, Mar. 2011.

A. R. Brown, J. R. Watling, G. Roy, C. Riddet, C. L. Alexander, U. Kovac, A. Martinez and A. Asenov, Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs, Journal of Computational Electronics, Vol.9, No.3-4, pp.187-196, 2010

A. R. Brown, N. M. Idris, J. R. Watling and A. Asenov, Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale 3D Statistical Simulation Study, IEEE Electron Device Letters, Vol.31, Iss.11, pp.1199-1201, 2010

A. R. Brown, V. Huard and A. Asenov, Statistical simulation of progressive NBTI degradation in a 45nm technology pMOSFET, IEEE Trans. on Electron Devices, Vol.57, No.9 pp.2320-2323, 2010

A. Martinez, N. Seoane, A. R. Brown, J. R. Barker and A. Asenov, Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study, IEEE Trans. on Electron Devices, Vol.57, No.7, pp.1626-1635, 2010

B. Cheng, A. R. Brown, S. Roy and A. Asenov, PBTI/NBTI Related Variability in TB-SOI and DG MOSFETs, IEEE Electron Device Letters, Vol.31, No.5, pp.408-410, 2010

A. Asenov, A. R. Brown, G. Roy, B. Cheng, C. Alexander, C. Riddet, U. Kovac, A. Martinez, N. Seoane and S. Roy, Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques, Journal of Computational Electronics, Vol.8, No.3-4, pp.349-373, 2009

A. Martinez, N. Seoane, A. R. Brown, J. R. Barker and A. Asenov, 3-D Non-Equilibrium Green’s Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor, IEEE Trans. on Nanotechnology, Vol.8, No.5, pp.603-610, 2009

N. Seoane, A. Martinez, A. R. Brown, J. R. Barker and A. Asenov, Current Variability in Si Nanowire MOSFETs due to Random Dopants in the Source/Drain Regions: A Fully-3D NEGF Simulation Study, IEEE Trans. on Electron Devices, Vol.56, No.7, pp.1388-1395, 2009

B. Cheng, S. Roy, A. R. Brown, C. Millar and A. Asenov, Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs, Solid-State Electronics, Vol.53, pp.767-772, 2009

A. R. Brown and A. Asenov, Capacitance fluctuations in bulk MOSFETs due to random discrete dopants, Journal of Computational Electronics, Vol.7, No.3, pp.115-118, 2008

T. D. Drysdale, A. R. Brown, G. Roy, S. Roy and A. Asenov, Capacitance variability of short range interconnects, Journal of Computational Electronics, Vol.7, No.3, pp.124-127, 2008

C. Riddet, A. R. Brown, S. Roy and A. Asenov, Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations, Journal of Computational Electronics, Vol.7, No.3, pp.231-235, 2008

A. Martinez, M. Bescond, A. R. Brown, J. R. Barker and A. Asenov, A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor, Journal of Computational Electronics, Vol.7, No.3, pp.359-362, 2008

A. Asenov, A. Cathignol, B. Cheng, K. P. McKenna, A. R. Brown, A. L. Shluger, D. Chanemougame, K. Rochereau and G. Ghibaudo, Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs, IEEE Electron Device Letters, Vol.29, No.8, 2008

A. Cathignol, B. Cheng, D. Chanemougame, A. R. Brown, K. Rochereau, G. Ghibaudo and A. Asenov, Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET, IEEE Electron Device Letters, Vol.29, No.6, pp.609-611, 2008

A. Martinez, J. R. Barker, M. Bescond, A. R. Brown and A. Asenov, Performance variability in wrap-round gate silicon nanotransistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain, Journal of Physics: Conference Series, Vol.109 012026, 2008

J. R. Watling, A. R. Brown, G. Ferrari, J. R. Barker, G. Bersuker, P. Zeitzoff and A. Asenov, Impact of High-κ Gate Stacks on Transport and Variability in Nano-CMOS Devices, J. Computational and Theoretical Nanoscience, Vol.5, pp.1072-1088, 2008

A. R. Brown, G. Roy and A. Asenov, Poly-Si Gate Related Variability in Decananometre MOSFETs with Conventional Architecture, IEEE Trans. on Electron Devices, Vol.54, No.11, pp.3056-3063, 2007

S. Markov, A. R. Brown, B. Cheng, G. Roy, S. Roy and A. Asenov, Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants, Japanese Journal of Applied Physics, Vol.46, No.4B, pp.2112-2116, 2007

C. Millar, S. Roy, A. R Brown and A Asenov, Simulating the Bio-Nanoelectronic Interface, J. Physics: Condensed Matter, Vol. 19, pp.215205-215216, 2007

K. Samsudin, F. Adamu-Lema, A.R. Brown, S. Roy and A. Asenov, Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study, Solid State Electronics, Vol.51, pp.611-616, 2007

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, 3-D Monte Carlo Simulation of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs, IEEE Trans. on Nanotechnology, Vol. 6, No. 1, pp.48-55, 2007

A. R. Brown, J. R. Watling and A. Asenov, Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-κ Gate Stacks, Journal of Computational Electronics, Vol.5, pp.333-336, 2006

G. Roy, A. R. Brown, F. Adamu-Lema, S. Roy and A. Asenov, Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs, IEEE Trans. on Electron Devices, Vol.53, No.12, pp.3063-3070, 2006

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, Sub 25nm UTB SOI SRAM Cell under the Influence of Discrete Random Dopants, Solid State Electronics, Vol.50, pp.660-667, 2006

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation, Solid State Electronics, Vol.50, pp.86-93, 2006

A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, A. R. Brown, B. Biegel and A. Asenov, The Impact of Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation, Journal of Physics: Conference Series, Vol.38, pp.192-195, 2006

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, Intrinsic Parameter Fluctuations in Conventional MOSFETs until the End of the ITRS: A Statistical Simulation Study, Journal of Physics: Conference Series, Vol.38, pp.188-191, 2006

C. L. Alexander, A. R. Brown, J. R. Watling and A. Asenov, Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects, IEEE Trans. on Nanotechnology, Vol.4, pp.339-344, 2005

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, Impact of Scattering in ‘Atomistic’ Device Simulations, Solid State Electronics, Vol.49, pp.733-739, 2005

C. Millar, A. Asenov, A. R. Brown and S. Roy, Tracking the Propagation of Individual Ions Through Ion Channels with nano-MOSFETs, Journal of Computational Electronics, Vol.4, pp.185-188, 2005

F. Adamu-Lema, G. Roy, A. R. Brown, A. Asenov and S. Roy, Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study, Journal of Computational Electronics, Vol.3, pp.203-206, 2004

A. Lee, A. R. Brown, A. Asenov and S. Roy, RTS Amplitudes in Decanano n-MOSFETs with Conventional and High-k Gate Stacks, Journal of Computational Electronics, Vol.3, pp.247-250, 2004

C. Riddet, A. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An Ab Initio Monte Carlo Simulation Study, Journal of Computational Electronics, Vol.3, pp.341-345, 2004

A. R. Brown, F. Adamu-Lema and A. Asenov, Intrinsic Parameter Fluctuations in Nanometre Scale Thin-body SOI Devices Introduced by Interface Roughness, Superlattices and Microstructures, Vol.34, pp.283-291, 2003.

A. Lee, A. R. Brown, A. Asenov and S. Roy, RTS Noise Simulation of Decanano MOSFETS Subject to Atomic Scale Structure Variation, Superlattices and Microstructures, Vol.34, pp.293-300, 2003.

C. Alexander, J. R. Watling, A. R. Brown and A. Asenov, Artificial Carrier Heating due to the introduction of ab initio Coulomb Scattering in Monte Carlo Simulations, Superlattices and Microstructures, Vol.34 pp.319-326, 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, Bipolar Quantum Corrections in Resolving Individual Dopants in ‘Atomistic’ Device Simulation, Superlattices and Microstructures, Vol.34 pp.327-334, 2003.

G. Roy, A. R. Brown, A. Asenov and S. Roy, Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations, Journal of Computational Electronics, Vol.2, No.2-4, pp.323-327, 2003

S. Roy, A. Lee, A. R. Brown and A. Asenov, Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime, Journal of Computational Electronics, Vol.2, No.2-4, pp.423-426, 2003

A. Asenov, A. R. Brown, J. H. Davies, S. Kaya and G. Slavcheva, Simulation of Intrinsic Parameter Fluctuations in Decananometer and Nanometer-Scale MOSFETs, IEEE Trans. on Electron Devices, Vol.50, No.9, pp.1837-1852, 2003

A. Asenov, S. Kaya and A. R. Brown, Intrinsic Parameter Fluctuations in Decananometre MOSFETs Introduced by Gate Line Edge Roughness, IEEE Trans. on Electron Devices, Vol.50, No.5, pp.1254-1260, 2003

A. Asenov, R. Balasubramanium A. R. Brown and J. H. Davies, RTS Amplitudes in Decananometer MOSFETs: a 3-D Simulation Study, IEEE Trans. on Electron Devices, Vol.50, No.3, pp.839-845, 2003

A. Asenov, A. R. Brown and J. R. Watling, Quantum Corrections in the Simulation of Decanano MOSFETs, Solid State Electronics, Vol.47, pp.1141-1145, 2003

A. Asenov, J. R. Watling, A. R. Brown and D. K. Ferry, The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices, Journal of Computational Electronics, Vol. 1, pp.503-513, 2002

A. R. Brown, A. Asenov and J. R. Watling, Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter, IEEE Trans. on Nanotechnology, Vol.1, pp.195-200, 2002

A. Asenov, S. Kaya and A. R. Brown, Implications of Imperfect Interfaces and Edges in Ultra-small MOSFET Characteristics, Physica Status Solidi (b), Vol.233, No.1, pp.101-112, 2002

A. R. Brown, J. R. Watling and A. Asenov, A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures, Journal of Computational Electronics, Vol. 1, pp.165-169, 2002

J. R. Watling, A. R. Brown and A. Asenov, Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?, Journal of Computational Electronics, Vol. 1, pp.289-293, 2002

G. Slavcheva, J. H. Davies, A. R. Brown, and A. Asenov, Potential Fluctuations in Metal-Oxide-Semiconductor Field-Effect Transistors Generated by Randomly Distributed Impurities in the Depletion Layer, J. Applied Phys, Vol.91 No.7 pp.4326-4334, 2002

A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies and S. Saini, Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub-100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study, IEEE Trans. Electron Dev., Vol.48, No.4, pp.722-729, 2001

A. Asenov, R. Balasubramaniam, A. R. Brown and J. H. Davies, Effect of single electron interface trapping in decanano MOSFETs: A 3D ‘atomistic’ simulation study, Superlattices and Microstructures, Vol. 27, No. 5/6, pp.411-416, 2000

A. Asenov, G. Glavcheva, A. R. Brown, R. Balasubramaniam and J.H. Davies, Statistical 3D ‘atomistic’ simulation of decanano MOSFETs, Superlattices and Microstructures, Vol.27, No.2/3, pp.215-227, 2000

A. Asenov, A. R. Brown, J. H. Davies and S. Saini, Hierarchical approach to ‘atomistic’ 3D MOSFET simulation, IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, Vol. 18, No.11, pp.1558-1565, 1999

A. R. Brown, A. Asenov and J. R. Barker, 3D parallel finite element simulation of in-cell breakdown in lateral-channel IGBT’s, VLSI Design, Vol.8 Nos.(1-4), pp99-103, 1998.

A. Asenov, A. R. Brown, S. Roy and J. R. Barker, Topologically rectangular grids in the parallel simulation of semiconductor devices, VLSI Design, Vol.6, Nos.(1-4), pp.91-95, 1998

A. Asenov, J. R. Barker, A. R. Brown and G.L. Lee, Scalable parallel 3D finite element nonlinear Poisson solver, Journal of Simulation Practice and Theory, Vol. 4, pp. 155-168, 1996.

Conference Papers

X. Wang, A. R. Brown, B. Cheng and A. Asenov, Statistical Variability and Reliability in Nanoscale FinFETs , International Electron Devices Meeting (IEDM) Technical Digest, pp.5.4.1-5.4.4, Washington, DC, USA, 5-7 December 2011

B. Cheng, A. R. Brown, X. Wang and A. Asenov, Statistical Variability Study of Extreme-Scaled SOI FinFet Device , Intel European Research & Innovation Conference, Leixlip, Ireland, 12-14 October 2011

N. Aymerich, A. Asenov, A. Brown, R. Canal, B. Cheng, J. Figueras, A. Gonzalez, E. Herrero, S. Markov, M. Miranda, P. Pouyan, T. Ramirez, A. Rubio, I. Vatajelu, X. Vera, X. Wang and P. Zuber, New Reliability Mechanisms in Memory Design for sub-22nm Technologies, IEEE 17th International On-Line Testing Symposium (IOLTS), pp.111-114, Athens, Greece, 13-15 July 2011

A. Martinez, A. R. Brown, S. Roy and A. Asenov, NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants, Ultimate Integration on Silicon (ULIS), 14-16 March, Cork, Ireland, 2011

A. Asenov, A. R. Brown and B. Cheng, Statistical aspects of NBTI/PBTI and impact on SRAM yield, Design, Automation and Test in Europe (DATE), 14-18 March, Grenoble, France, 2011

N. M. Idris, B. Cheng, A. R. Brown, S. Markov, and A. Asenov, Comprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET, 7th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (EUROSOI), 17-19 January, Granada, Spain, 2011

A. R. Brown, X. Wang, S. Markov, B. Cheng and A. Asenov, Simulation of statistical variability in 18 and 13nm bulk MOSFETs, Intel European Research and Innovation Conference, 12-14 October, Leixlip, Ireland. p.99, 2010

A. Martinez, N. Seoane, A. R. Brown and A. Asenov, A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs, Silicon Nanoelectronics Workshop, 13-14 June, Honolulu, HI, USA, 2010

N. M. Idris, A. R. Brown, J. R. Watling and A. Asenov, Simulation Study of Workfunction Variability in MOSFETs with Polycrystalline Metal Gates, Proc. Ultimate Integration on Silicon (ULIS), March 18-19, Glasgow, Scotland, pp.165-168, 2010

A. Martinez, N. Seoane, A. R. Brown and A. Asenov, A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET, Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sept 9-11, San Diego, CA, USA, pp.194-197, 2009

A. Martinez, A. R. Brown and A. Asenov, Perturbative vs Non-Perturbative Impurity Scattering in a Thin Si Gate-All-Around Nanowire transistor: A NEGF study, 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), 24-28 August, Montpellier, France, pp.227, 2009

A. Martinez, N. Seoane, A. R. Brown and A. Asenov, Variability studies of a narrow Si nanowire using a full-3D NEGF formalism, Silicon Nanoelectronics Workshop, 13-14 June, Kyoto, Japan, pp.141-142, 2009

A. R. Brown, A. Martinez, N. Seoane and A. Asenov, Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET, Proc. Spanish Conference on Electron Devices (CDE), Feb 11-13, Santiago de Compostela, Spain, pp.140-143, 2009

A. Martinez, A. R. Brown, N. Seoane and A. Asenov, Investigation of resistance in n-doped Si wires using NEGF formalism, Proc. Spanish Conference on Electron Devices (CDE), Feb 11-13, Santiago de Compostela, Spain, pp.416-419, 2009

N. Seoane, A. Martinez, A. R. Brown and A. Asenov, Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs, Proc. Spanish Conference on Electron Devices (CDE), Feb 11-13, Santiago de Compostela, Spain, pp.180-183, 2009

A. Asenov, S. Roy, A. R. Brown, G. Roy, C. Alexander, C. Riddet, C. Millar, B. Cheng, A. Martinez, N. Seoane, D. Reid, M. F. Bukhori, X. Wang and U. Kovac, Advanced simulation of statistical variability and reliability in nano CMOS transistors, International Electron Devices Meeting (IEDM) Technical Digest, p.421, 2008 Invited

B. Cheng, S. Roy, A. R. Brown, C. Millar and A. Asenov, Evaluation of intrinsic parameter fluctuations in 45, 32 and 22 nm technology node LP n-MOSFETs, Proceedings of the 38th European Solid-State Device Research Conference (ESSDERC), 15-19 September, Edinburgh, Scotland, pp.47-50, 2008

N. Seoane, A. Martinez, A. R. Brown, J. R. Barker and A. Asenov, 3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor, Silicon Nanoelectronics Workshop, 15-16 June, Honolulu, HI, USA, 2008

R. Sinnott, A. Asenov, A. Brown, C. Millar, G. Roy, S. Roy and G. Stewart, Grid Infrastructures for the Electronics Domain: Requirements and Early Prototypes from an EPSRC Pilot Project, Proceedings of the UK e-Science All Hands Meeting, 10-13 September, Nottingham, UK, pp.509-516, 2007

A. R. Brown, A. Martinez, M. Bescond and A. Asenov, Nanowire MOSFET variability: a 3D density gradient versus NEGF approach, Silicon Nanoelectronics Workshop, 10-11 June, Kyoto, Japan, pp.127-128, 2007

G. Roy, A. R. Brown and A. Asenov, Random dopant fluctuation resistant ‘bulk’ MOSFETs with epitaxial delta doped channels, Proceedings of the 8th International Conference on Ultimate Integration on Silicon (ULIS), 15-16 March, Leuven, Belgium, pp.109-112, 2007

A. R. Brown, G. Roy and A. Asenov, Impact of Fermi Level Pinning at Polysilicon Gate Grain Boundaries on nano-MOSFET Variability: A 3-D Simulation Study, Proceedings of the 36th European Solid-State Device Research Conference (ESSDERC), 19-21 September, Montreux, Switzerland, pp.451-454, 2006

A. R. Brown, J. R. Watling and A. Asenov, Intrinsic Parameter Fluctuations due to Random Grain Orientations in High-k Gate Stacks, Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE), 25-27 May, Vienna, Austria, pp.49-50, 2006

K. Samsudin, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs, Proc. 7th European Workshop on Ultimate Integration of Silicon (ULIS), 20-21 April, Grenoble, France, pp.93-96, 2006

A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, A. R. Brown and A. Asenov, A Study of the Interface Roughness on a DG-MOSFET using a Full 2D NEGF Technique, International Electron Devices Meeting (IEDM) Technical Digest, pp.627-630, 2005

A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, A. R. Brown, B. Biegel and A. Asenov, The Unintentional Discrete Charges in a Nominally Undoped Channel of a Thin Body Double Gate MOSFET: Classical to Full Quantum Simulation, Proc. 7th International Conference on New Phenomena in Mesoscopic Systems and 5th International Conference on Surfaces and Interfaces in Mesoscopic Devices (NPMS/SIMD), 27 November - 2 December, Maui, HI, USA, pp.81-82, 2005

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, Intrinsic Parameter Fluctuations in Conventional MOSFETs until the End of the ITRS: A Statistical Simulation Study, Proc. 7th International Conference on New Phenomena in Mesoscopic Systems and 5th International Conference on Surfaces and Interfaces in Mesoscopic Devices (NPMS/SIMD), 27 November - 2 December, Maui, HI, USA, pp.35-36, 2005

G. Roy, F. Adamu-Lema, A. R. Brown, S. Roy and A. Asenov, Simulation of Combined Sources of Intrinsic Parameter Fluctuations in a ‘Real’ 35 nm MOSFET, Proc. European Solid-State Device Research Conference (ESSDERC), 12-16 September, Grenoble, France, pp.337-340, 2005

K. Samsudin, B. Cheng, A. R. Brown, S. Roy, A. Asenov, UTB SOI SRAM Cell Stability Under the Influence of Intrinsic Parameter Fluctuation, Proc. European Solid-State Device Research Conference (ESSDERC), 12-16 September, Grenoble, France, pp.553-556, 2005

A. R. Brown, J. R. Watling, A. Asenov, G. Bersuker and P. Zeitzoff, Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-κ gate stack materials, Proc. 2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE Cat. No. 05TH8826, 1-3 September, Tokyo, Japan, pp.27-30, 2005

J. R. Barker, J. R. Watling, A. Brown, S. Roy, P. Zeitzoff, G. Bersuker and A. Asenov, Monte Carlo Study of Coupled SO Phonon-Plasmon Scattering in Si MOSFETs with High-κ Dielectric Gate Stacks: Hot Electron and Disorder Effects, in Non-Equilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th International Conference, Springer Proceedings in Physics No.110, 25-29 July, Chicago, IL, USA, pp.115-119, Springer, 2005

A. Martinez, J. R. Barker, A. Svizhenko, M. Bescond, M. P. Anantram, A. R. Brown and A. Asenov, A 2D-NEGF Quantum Transport Study of Unintentional Charges in a Double Gate Nanotransistor, in Non-Equilibrium Carrier Dynamics in Semiconductors: Proceedings of the 14th International Conference, Springer Proceedings in Physics No.110, 25-29 July, Chicago, IL, USA, pp.125-118, Springer, 2005

C. Millar, A. Asenov, S. Roy and A. R. Brown, Simulating the Bio-Nano-CMOS Interface, Proc. 5th IEEE Conference on Nanotechnology, Nagoya, Japan, July, pp.325-328, 2005

C. Riddet, A. R. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs, Silicon Nanoelectronics Workshop, 12-13 June, Kyoto, Japan, pp.6-7, 2005

A. Martinez, A. Svizhenko, M. P. Anantram, J. R. Barker, A. R. Brown, B. Biegel and A. Asenov, Impact of stray charges on the characteristics of nano-DGMOSFETs in the ballistic regime: A NEGF Simulation study, Silicon Nanoelectronics Workshop, 12-13 June, Kyoto, Japan, pp.76-77, 2005

K. Samsudin, B. Cheng, A. R. Brown, S. Roy and A. Asenov, Impact of Body Thickness Fluctuation in Nanometre Scale UTB SOI MOSFETs on SRAM Cell Functionality, 6th European Conference on ULtimate Integration of Silicon (ULIS), Bologna, Italy, 7-8 April, 2005

F. Adamu-Lema, G. Roy, A. R. Brown, A. Asenov and S. Roy, Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study, Abstracts of the 10th International Workshop on Computational Electronics (IWCE-10), W. Lafayette, IN, USA, 24-27 October, pp.44-45, 2004

A. Lee, A. R. Brown, A. Asenov and S. Roy, RTS Amplitudes in Decanano n-MOSFETs with Conventional and High-k Gate Stacks, Abstracts of the 10th International Workshop on Computational Electronics (IWCE-10), W. Lafayette, IN, USA, 24-27 October, pp.159-160, 2004

C. Riddet, A. Brown, C. Alexander, J. R. Watling, S. Roy and A. Asenov, Scattering from Body Thickness Fluctuations in Double Gate MOSFETs. An Ab Initio Monte Carlo Simulation Study, Abstracts of the 10th International Workshop on Computational Electronics (IWCE-10), W. Lafayette, IN, USA, 24-27 October, pp.194-195, 2004

C. Millar, A. Asenov, A. R. Brown and S. Roy, Tracking the Propagation of Individual Ions Through Ion Channels with nano-MOSFETs, Abstracts of the 10th International Workshop on Computational Electronics (IWCE-10), W. Lafayette, IN, USA, 24-27 October, pp.205-206, 2004

A. Lee, A. R. Brown, A. Asenov and S. Roy, RTS Amplitudes in Decanano n-MOSFETs with Conventional and High-k Gate Stacks, International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, 15-17 September, 2004

C. Alexander, A. R. Brown, J. R. Watling, and A. Asenov, Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs, Simulation of Semiconductor Processes and Devices (SISPAD) 2004, Eds. G. Wachutka and G. Schrag, Springer-Verlag, Vienna, pp.223-226, 2004

A. Asenov, G. Roy, C. Alexander, A. R. Brown, J. R. Watling and S. Roy, Quantum mechanical and transport aspects of resolving discrete charges in nano-CMOS device simulation, 4th IEEE Conference on Nanotechnology (IEEE Nano), 17-19 August, Munich, Germany, pp.334-336, 2004

C. Alexander, A. R. Brown, J. R. Watling, and A. Asenov, Impact of Single Charge Trapping in Nano-MOSFETs: Electrostatic vs. Transport Effects, Silicon Nanoelectronics Workshop, 13-14 June, Honolulu, HI, 2004

C. Alexander, A. R. Brown, J. R. Watling and A. Asenov, Impact of Scattering in Atomistic Device Simulations, Workshop on Ultimate Integration of Silicon (ULIS 2004), pp.89-92, 11-12 March, Leuven, Belgium, 2004

A. R. Brown, F. Adamu-Lema and A. Asenov, Intrinsic Parameter Fluctuations in UTB MOSFETs Induced by Body Thickness Variations, Silicon Nanoelectronics Workshop, 8-9 June, Kyoto, Japan, 2003

A. Asenov, A. R. Brown and J. R. Watling, Modelling End-of-the-Roadmap Transistors, Proc. 203rd Meeting of The Electrochemical Society - ULSI Process Integration III, pp.306-321, 27 April - 2 May, Paris, France, 2003

J. R. Watling, A. Asenov, A. R. Brown, A. Svizhenko and M. P. Anantram, Direct Source-to-Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometre Scale Double Gate MOSFETs, Proc. International Conference on Modeling and Simulation of Microsystems / NANOTECH 2003, Vol.2, pp.202-205, February 23-27, San Francisco, CA, USA, 2003

J. R. Watling, A. R. Brown, A. Asenov, A. Svizhenko and M. P. Anantram Simulation of Direct Source-to-Drain Tunnelling Using the Density Gradient Formalism: Non-equilibrium Green’s Function Calibration, Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE Cat. No. 02TH8621, pp.267-270, 2002

A. Asenov, M. Jaraiz, S. Roy, G. Roy, F. Adamu-Lema, A. R. Brown, V. Moroz and R. Gafiteanu, Integrated Atomistic Process and Device Simulation of Decananometre MOSFETs, Proc. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE Cat. No. 02TH8621, pp.87-90, 2002

A. R. Brown, A. Asenov and J. R. Watling, Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter, Silicon Nanoelectronics Workshop, 9-10 June, Honolulu, HI, 2002

A. Asenov, A. R. Brown and J. R. Watling, The Use of Quantum Potentials for Confinement in Semiconductor Devices, Proc. 5th International Conference on Modeling and Simulation of Microsystems (MSM 2002), 22-25 April, Puerto Rico, 2002

A. Asenov, A. R. Brown and J. R. Watling, Quantum Corrections in the Simulation of Decanano MOSFETs, Proc. 3rd European Workshop on Ultimate Integration of Silicon (ULIS 2002), Munich, Germany, 2002

J. R. Watling, A. R. Brown, A. Asenov and D. K. Ferry, Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential, in Simulation of Semiconductor Processes and Devices 2001, edited by D. Tsoukalas and C. Tsamis, pp.82-85 Springer-Verlag, Vienna, 2001

S. Kaya, A. R. Brown, A. Asenov, D. Magot and T. Linton, Analysis of Statistical Fluctuations due to Line Edge Roughness in sub-0.1m MOSFETs, in Simulation of Semiconductor Processes and Devices 2001, edited by D. Tsoukalas and C. Tsamis, pp.78-81, Springer-Verlag, Vienna, 2001

A. R. Brown, S. Kaya, A. Asenov, J. H. Davies and T. Linton, Statistical Simulation of Line Edge Roughness in Decanano MOSFETs, Silicon Nanoelectronics Workshop, 10-11 June, Kyoto, Japan, 2001

A. Asenov, R. Balasubramaniam, A. R. Brown, J. H. Davies, S. Saini, Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D ‘Atomistic’ Simulation Study, International Electron Devices Meeting (IEDM) Technical Digest, pp.279-282, 2000

A. Asenov, G. Slavcheva, A. R. Brown, J. H. Davies and S. Saini, Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 micron MOSFETs, International Electron Devices Meeting (IEDM) Technical Digest, pp. 535-558, 1999

A. Asenov, A. R. Brown, S. Roy, Parallel Semiconductor Device Simulation: from Power to ‘Atomistic’ Devices, 6th International Workshop on Computational Electronics, pp.58-61, Osaka, Japan, 19-21 October 1998.

A. Asenov, A. R. Brown, S. Roy, C. Arokianathan, J. Davies and J.R. Barker, Parallel 3D Simulation of Semiconductor Devices, in Proc. Second NASA Device Modeling Workshop, Ames Research Center, Moffet Field, CA., pp. 85-99, 1997. Invited

A. Asenov, A. R. Brown, S. Roy and J. R. Barker. Topologically Rectangular Finite Element Grids in the Parallel Simulation of Semiconductor Devices, Proc. Computational Mechanics in UK, 4th ACME Annual Conference, pp. 49-52, 1996

S. Roy, A. Asenov, A. R. Brown and J. R. Barker, Partitioning of Topologically Rectangular Finite Element Grids, Proc. Computational Mechanics in UK, 4th ACME Annual Conference, pp. 41-44, 1996

A. R. Brown, A. Asenov, S. Roy and J. R. Barker, Parallel 3D finite element power semiconductor device simulator based on topologically rectangular grid, Simulation of Semiconductor Devices and Processes Vol. 6, Eds. H. Ryssel and P. Pichler, Springer Verlag, pp.336-339, 1995.

A. R. Brown, A. Asenov, S. Roy and J. R. Barker, Development of a parallel 3D finite element power semiconductor device simulator, IEE Colloquium on Physical Modeling of Semiconductor Devices, Digest No: 1995/064 pp 2/1-2/6.

A. R. Brown, A. Asenov, J. R. Barker, P. Waind and D.E. Crees, Calibration of the numerical simulations in the design of high temperature IGBTs, Proc. 2nd International Seminar on Power Semiconductors (ISPS’94), Ed. Vítězslav Benda, Czech Technical University in Prague, 31 August - 2 September, pp.151-157, 1994

A. Asenov, J. R. Barker and A. R. Brown, Parallel 3D finite element simulation of nano-structured devices, Proc. NASECODE X, Dublin, pp. 52-53, 1994

J. R. Barker, A. Asenov, A. R. Brown, J. Cluckie, S. Babiker and C.R. Arokianathan, Parallel simulation of semiconductor devices, in Massively Parallel Processing, Applications and Development, Eds. L. Dekker, W. Smith, J.C. Zuidervaart, Elsevier, pp. 683 - 690, 1994

A. Asenov, J. R. Barker, A. R. Brown and G.L. Lee, Scalable parallel 3D finite element nonlinear Poisson solver, in Massively Parallel Processing, Applications and Development, Eds. L. Dekker, W. Smith, J.C. Zuidervaart, Elsevier, pp. 665 - 672, 1994

A. R. Brown, A. Asenov, J. R. Barker, S. Jones and P. Waind, Numerical simulation of IGBTs at elevated temperatures, Proc. Int. Workshop on Computational Electronics, ed C. M. Snowden, University of Leeds Press, pp 50-55, 1993

A. Brown, D. Reid, A. Asenov and J. R. Barker, The implementation and speed-up of coloured SOR methods for solving 3D Poisson equation on an array of transputers, Proc. Int. Workshop on Computational Electronics, ed C. M. Snowden, University of Leeds Press, pp 173-176, 1993