I was born in Edinburgh, Scotland. After attending James Gillespie's Primary School and George Watson's College in Edinburgh I went to Glasgow University to study Electrical Engineering. I received a first class honours B.Eng degree in 1992.
Since then I have been working as a Research Associate in the Department of Electronics and Electrical Engineering.
I am a member of the Device Modelling Group which is involved with the numerical simulation of semiconductor devices. I started off on the development of a 3D, parallel simulator for modelling Insulated Gate Bipolar Transistors. I'm now working on the investigation of intrinsic parameter fluctuations in decananometre scale MOSFETs due to discrete doping, line edge roughness, oxide/body thickness variations and trapped charges.
For more information on my work, and that of the group, check out the Device Modelling Group home page or have a look at my list of publications.
You can also visit my Photo Gallery or read some words of wisdom on the Device Modelling Group Quotes Page.
Andrew R. Brown